to-92 plastic-encapsulate transistors 8550S transistor (pnp) feature excellent h fe linearity maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector dissipation 625 mw t j junction temperature 150 t stg junction and storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = -100ua, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100ua, i c =0 -5 v collector cut-off current i cbo v cb = -40v, i e =0 -0.1 ua collector cut-off current i ceo v ce = -20v,i b =0 -0.1 ua emitter cut-off current i ebo v eb = - 3v, i c =0 -0.1 ua h fe(1) v ce = -1v, i c = -50ma 85 400 dc current gain h fe(2) v ce = -1v, ic= -500ma 50 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma -0.6 v base-emitter saturation voltage v be (sat) i c =-500ma, i b =-50ma -1.2 v transition frequency f t v ce =- 6v, i c =-20ma f =30mhz 150 mhz classification of h fe (1) rank b c d d3 range 85-160 120-200 160-300 300-400 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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